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| Frage | Antworten |
| Many ________ devices, such as junction diodes, are sometimes used as fast acting switches to turn current on and off in circuits. | semiconductor |
| A _____ is a semiconductor device that has two terminals. They conduct electrons and are used to modify voltage input in circuits. | diode |
| A _____ diode is made by combining N-type and P-type materials together. | junction |
| In a diode, the point where the N-type and P-type materials meet is called the ________. | PN junction |
| The top half of a diode is called the _____. It is made up of P-type material. | anode |
| The bottom half of a diode is called the _____. It is made up of N-type material. | cathode |
| In a diode, the __________ is an area (located right around the PN junction) where no charge carriers are available. This is caused by the charge carriers in the diode moving away from the PN junction. | depletion region |
| ______ voltage is a small potential across the PN junction caused by the attraction of positive and negative charges across the depletion region. | Junction |
| A _____ basic function is to keep current flowing in one direction. | diode's |
| When a forward (positive) voltage is applied to a diode, current moves from the cathode end to the anode end. Applying current in this direction is called _____________. | forward-biasing |
| If current is applied to a diode from the anode end to the cathode end, it will resist the flow of current. Applying voltage in this direction is called ____________. | reverse-biasing |
| When a positive voltage is applied to a diode (when it's forward-biased), the current doesn't start to flow until the voltage reaches a value called the ___________ voltage. | forward breakover |
| When a negative voltage is applied to a diode (when it's reverse-biased) a very small leakage current occurs until the __________ voltage is reached. | reverse breakover |
| The amount of time it takes a diode to completely switch current directions is called its ______ time. | recovery |
| The amount of time it takes for the charge carriers to be swept out of the P and N regions of a diode is called the ______ time. | storage |
| The amount of time required for the capacitance at the diode's junction to charge is called the ______ time. | transition |
| Diodes that are manufactured in a special way to have a very short recovery time are called ______ diodes. | step-recovery |
| Two other names for step-recovery diodes are ____ and ________. | snap, snap-off |
| The terms ____ and _______ diodes refer the fact that the current snaps back to zero very rapidly. | snap, snap-off |
| In a ________ diode, and N-type material is interfaced with a metal. When the anode is made positive w/ respect to the cathode, the charge carriers move rapidly and easily from the N-type material into the metal. However, when the opposite is done, it's virtually impossible for the charge carriers to move into the N-type material. | hot-carrier |
| The _______ diode has no depletion region, so there's no junction capacitance to charge. | hot-carrier |
| A _______ diode is composed of three layers of semiconducting material, and it has two PN junctions. This type of diode is actually made of two diodes connected back-to-back. | three-layer |
| The more common name for a three-layer diode is ____. | DIAC |
| DIAC (aka three-layer diode) stands for "_____________". | diode for alternating current |
| In the ________ region of a DIAC, the voltage decreases as the current increases. Then, following this region, the voltage across the DIAC is nearly constant as the current increases. | negative resistance |
| The ______ diode is composed of four layers of semiconductor material, and the device has three PN junctions. | four-layer |
| The four-layer diode is also called the ______ diode. | Shockley |
| Because of the three PN junctions in the four-layer diode, it's sometimes called a _______ diode. | PIN-PIN |
| A _____ diode is a two-terminal device that's similar to a silicon rectifier in construction. However, this diode differs from other diodes in that it can be used as a very fast switch, oscillator, or an amplifier. | tunnel |
| Normal diodes conduct when a positive voltage is applied, but ______ diodes are the opposite. These diodes conduct when a negative voltage is applied. | backward |
| Because the characteristic curve of the backward diode is similar in many ways to that of a tunnel diode, a backward diode is sometimes called a __________. | tunnel rectifier |
| The ________ transistor is a single-(PN)junction with three terminals. It's unique characteristics make it useful in certain oscillator, switching, and trigger circuits for controlling silicon-controlled rectifiers. | unijunction |
| The abbreviation for "unijunction transistor" is ___. | UJT |
| The UJT was originally called the ________ diode. | double-base |
| _____ or _______ are base connections at each end of a UJT. | Ohmic, ordinary contacts |
| __________ - the positive anode voltage at which a silicon controlled rectifier switches to the conductive state | Breakover Voltage |
| A ____________ transistor is a three-lead semiconductor device which is similar to a UJT, except that it's programmable. This simply means that circuit designers can set the voltage at which the device breaks over. | programmable unijunction |
| The abbreviation for "programmable unijunction transistor" is ___. | PUT |
| A _____________ switch, or bidirectional thyristor, can conduct in both directions, so it behaves like two SCRs connected back-to-back or in inverse parallel. | triode AC conductor |
| The abbreviation for "triode AC conductor" is ____. | TRIAC |
| A ______ is a four-layered semiconductor rectifier in which the flow of current between two electrodes is triggered by a signal at a third electrode. | thyristor |
| A __________ can be thought of as an SCR with two gates. | silicon-controlled switch |
| The abbreviation for "silicon-controlled switch" is ___. | SCS |
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