Flash memory is an electronic non-volatile computer storage medium that can be electrically erased and reprogrammed.

Introduced by Toshiba in 1984, flash memory was developed from EEPROM (electrically erasable programmable read-only memory). There are two main types of flash memory, which are named after the NAND and NOR logic gates. The internal characteristics of the individual flash memory cells exhibit characteristics similar to those of the corresponding gates.

Whereas EPROMs had to be completely erased before being rewritten, NAND type flash memory may be written and read in blocks (or pages) which are generally much smaller than the entire device. NOR type flash allows a single machine word (byte) to be written—to an erased location—or read independently.

The NAND type is primarily used in main memory, memory cards, USB flash drives, solid-state drives, and similar products, for general storage and transfer of data. NAND or NOR flash memory is also often used to store configuration data in numerous digital products, a task previously made possible by EEPROM or battery-powered static RAM. One significant disadvantage of flash memory is the finite amount of read/write cycles in a specific block.

	Created by Elizabeth Rivera almost 10 years ago

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